Exciton binding energies in GaN/AlxGa1 − xN pseudomorphic quantum wells

Abstract Interband transitions of pseudomorphic GaN/ Al x Ga 1 −  x N quantum wells are analysed theoretically with respect to the piezoelectric field utilizing a 6  ×  6 Rashba–Sheka–Pikus (RSP) Hamiltonian. Band structure modifications due to the built-in Stark effect explain a shift of the emission peak in GaN/ Al 0.15 Ga 0.85 N of up to 400 meV. Quantum well exciton binding energies are calculated by the variational method and are discussed in terms of spatial separation of electrons and holes by the built-in electric field, as well as the interaction between valence subbands.