Regrowth of Damaged Layers in Diamond Produced by Ion Implantation

We have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or indium ions. For C or C plus B implantation doses of 2 × 10−15 cm−2 or less, complete recovery of channeling damage occurred after RTA at 1100°C or furnace annealing at 900°C. Optical measurements on samples implanted with high energy carbon ions show better recovery compared to the shallower implantations. PAC results showed that co-implantation with C and In caused a considerable fraction (~15%) of the In atoms to occupy well-defined lattice sites characterized by an electric field gradient having its major component along , and a frequency of 116 MHz.