Monitoring SRAM BTI degradation by current-based tracking technique

The scaling of CMOS technologies towards nano-scale size nodes brings up critical design challenges such as parameter variability mitigation and device aging control along the chip lifetime. The combination of these phenomena leads to a time-dependent variability of the electrical properties of the device, which can significantly impact the performance, yield and reliability of the circuits and systems. This work aims for presenting a novel on-chip aging sensor in order to monitor the aging profile of the SRAM cells when utilized in a reliability enhancement strategy such as the adaptive proactive reconfiguration approach.