Method and apparatus for material-specific characterization of a semiconductor device

Process for the material-specific characterization of at least one semiconductor component in the form of a solar module or of the interconnected solar modules, characterized in that the semiconductor component is excited by an alternating voltage over a wide frequency range, that the alternating voltage between the short-circuited terminals of the semiconductor device and ground is applied to an impedance characteristic of the semiconductor component is measured as a function of the frequency response and that a comparison of the impedance curve with a course of an impedance output state of the semiconductor device for the detection of corrosion or contact problems caused by delamination or malfunction is used.