A method for manufacturing a semiconductor device having a gate dielectric layer having a high K and a gate electrode made of metal

A method for manufacturing a semiconductor device, comprising: Forming a first dielectric layer on a substrate; Forming a trench in said first dielectric layer; Forming a gate dielectric layer of high k on the substrate, wherein the gate dielectric layer of high k has a first portion which is formed at the bottom of the trench, and a second part; Forming a first metal layer on both the first and on the second part of the gate dielectric layer of high k, wherein the first metal layer having a first work function; Forming a sacrificial light absorbing material on the first metal layer, wherein a first part of the sacrificial light absorbing material the first part of the gate dielectric layer covered with a high k and a second part of the sacrificial light absorbing material the second part of the gate dielectric layer covered with high-k, removing the first portion of the sacrificial light absorbing material, while the second part of the sacrificial light absorbing material is retained, whereby a portion of the first ...