Fabrication and Characterization of a Fully Si Compatible Forming-Free GeO x Resistive Switching Random-Access Memory

Recently, resistive switching random-access memory (ReRAM) has been considered as one of the most promising nonvolatile memory (NVM) technologies, owing to its high scalability, low power consumption, and fast switching speed [1]. In this work, we designed and fabricated Ni/GeOx/p+ Si ReRAM having narrower parameter distribution, robust endurance, and enhanced superiority in Si processing compatibility. Ge has shown wide applications for Si CMOS extension and photonics towards the advanced VLSI [2], and another application for NVM is reported in this work. The process architecture and measurement results are demonstrated, and the annealing effects are investigated.