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Total ionizing dose influence on proton irradiated triple gate SOI Tunnel FETs
Total ionizing dose influence on proton irradiated triple gate SOI Tunnel FETs
2018
Henrique Lanza Faria Torres
Joao Antonio Martino
Paula Ghedini Der Agopian
Eddy Simoen
Rita Rooyackers
Cor Claeys
Keywords:
Radiochemistry
Absorbed dose
Irradiation
Silicon on insulator
Proton
Materials science
proton radiation
Optoelectronics
triple gate
Correction
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