Non‐Contact, Image‐Based Photoluminescence Metrology for Ion Implantation and Annealing Process Inspection

In this paper, we report results from a systematic evaluation of sensitivity, resolution and intrinsic capability of an RTPL system across a range of different implant conditions, including doses from 1011 to 1016 cm−2 and energy from sub‐keV to the MeV level. Comparisons are made to existing non‐contact and physical methods across this broad range of implant conditions. The RTPL system is shown to correlate well with all techniques investigated while offering sensitivity improvements for resolving critical parameters, such as energy, which is a reflection of the depth of the as‐implanted junction. In addition, rapid, high resolution, full‐wafer map imaging and smaller micron‐scale scans enable visual characterization of uniformity under both as‐implanted and annealed conditions. Visual inspection capability is shown to be especially useful for characterizing annealing processes and revealing unique residual defect patterns.