Comparison of driving concepts for silicon carbide bipolar junction transistors
2016
This paper presents a comparison between conventional base driver concepts for bipolar silicon carbide transistors and an approach based on utilizing a buck-converter-IC to drive the bipolar transistor. The different concepts are simulated and compared with respect to switching performances and driving losses. The results are validated by corresponding measurements.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
9
References
1
Citations
NaN
KQI