Old Web
English
Sign In
Acemap
>
Paper
>
Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape
Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape
2009
Ramadan
Martin
Reveyrand
Nebus
Bouysse
Lapierre
Villemazet
Forestier
Keywords:
Power-added efficiency
Power (physics)
gate voltage
Harmonic analysis
L band
Optoelectronics
Wide-bandgap semiconductor
Waveform
Power semiconductor device
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]