Device having nitride quantum dot and method of manufacturing the same

It is disclosed about the device and a method of manufacturing the quantum dot having a nitride. The disclosed device includes a nitride quantum dot layer provided on the nitride-based material layer and the nitride-based material layer is provided with a plurality of nano-rods layers that are spaced apart from each other on and, each of the nanorod. Between each of the nanorods and the nitride layer and the quantum dots it may be provided further a layer of pyramidal form. The nitride layer and the quantum dot nano-rods may be covered with the upper contact layer. Wherein the plurality of quantum dots nitride present on each nanorod layer, and wherein the plurality of nitride quantum dots may include a nitride quantum dots of different sizes.