Injection is used in a semiconductor manufacturing member and a substrate processing apparatus having the same

A can generate a stable plasma, to provide a plasma processing apparatus having the ejector member and that for semiconductor manufacturing. The present invention relates to a plasma processing apparatus, a plurality of substrates W are housed the process chamber 100 of the plasma treatment process is performed, is installed in the process chamber 100, a plurality of substrates W are placed on the same plane and the support member 200 is disposed so as to be opposed to the support member 200, so that the plurality of substrates W at least one is placed on the supporting member 200 of the reaction gas and fuzzy gas can be independently injected at a position corresponding to each to, the injection member 300 having a plurality of baffles as was partitioned independently of one another in the region, as baffle jetting member 300 each sequentially pivoting a plurality of substrates W on which is placed on the support member 200 , a drive unit 290 for rotating the support member 200 or the injection member 300, wherein the injection member 300 ejects a plurality of baffles, the reactive gas small Installed in Kutomo one baffle includes a plasma generator 340 for plasma reaction gas injected into the substrate W. .FIELD 1