Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T
2015
The electrical resistivity, the Hall effect, the free charge carrier mobility, and their field dependences have been studied in lanthanum monobismuthide (LaBi) over the temperature range of 1.7–300 K in magnetic fields to 13 T. For comparison, similar measurements have been performed on samples of lanthanum monotelluride (LaTe). It has been shown that LaBi is a semiconducting material with a complex structure of the conduction band.
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