A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning Excitation

A new simple method is proposed to extract the ambipolar diffusion length for two-dimensional (2D) electronic transport in thin film structures using a scanning photoluminescence microscopy (SPLM) setup. No spatially-resolved photoluminescence detection methods are required. By measuring the excitation-position-dependent PL intensity across the edge of a semiconductor, ambipolar diffusion length can be extracted from the SPLM profile through a simple analytic fitting function. Numerical simulation was first used to verify the fitting method. Then the fitting method was applied to extract the ambipolar diffusion length from the measured SPLM profile of a GaAs thin film structure. Carrier lifetime was obtained in an accompanying time-resolved photoluminescence measurement under the same excitation condition, and thus the ambipolar diffusion coefficient can be determined simultaneously. The new fitting method provides a simple way to evaluate carrier transport properties in 2D electronic transport structures such as thin films or quantum wells.