Calculation of domain wall resistance in magnetic nanowire

The enhancement of domain wall resistance (DWR) in spintronic devices containing the domain wall is required for a full understanding since it represents the efficiency of spin transport and contributes to magnetoresistance phenomena. In this work, we theoretically investigate the effect of the domain wall width, injected current density, and temperature on DWR in magnetic nanowire by using the generalized spin accumulation model based on the Zhang, Levy, and Fert approach. The proposed model allows us to deal with a multilayer system with arbitrary orientation of magnetization. In addition, the temperature effect can be taken into account by considering the spin-dependent resistivity of the ferromagnet at any finite temperature. This leads to the calculation of temperature variation of spin transport parameters, and it eventually allows us to calculate the thermal effect on spin accumulation. The spin transport behavior and DWR can be calculated directly from the gradient of spin accumulation and spin current within the wall. The results show the increase in DWR with temperature as the thermal effect causes the reduction of transport parameters.