Soft error improvement in SRAMs by ion implanted shallow well structure

Sensibility to alpha particle and neutron-induced soft errors in SRAM was reduced by an ion implanted shallow well structure. The amount of charges collected to a storage node and the sensibility to soft error were reduced by 30-50% and 70-80%, respectively, by reducing a well depth from 2.0 /spl mu/m to 13 /spl mu/m.