Old Web
English
Sign In
Acemap
>
Paper
>
Changes in Capacitance-Voltage Characteristics of Al 2 O 3 /GaN MOS Diodes Due to Gamma-Ray Irradiation
Changes in Capacitance-Voltage Characteristics of Al 2 O 3 /GaN MOS Diodes Due to Gamma-Ray Irradiation
2019
Keito Aoshima
Shota Kaneki
Masahiro Horita
Jun Suda
Tamotsu Hashizume
Keywords:
Diode
Materials science
capacitance voltage
gamma ray irradiation
Optoelectronics
Gamma ray
Gallium nitride
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]