Enhanced ethyl acetate sensing performance of Al-doped In2O3 microcubes

Abstract In 2 O 3 and 2.5-10 at% Al-doped In 2 O 3 are prepared through a simple solvothermal method, and samples are characterized by a variety of methods to investigate the phase and morphological properties. The gas sensing measurements reveal that Al-doped In 2 O 3 has superior ethyl acetate sensing capability as compared to pure In 2 O 3 , with the maximum response value approaching 56.3–100 ppm ethyl acetate at 184 °C, which is about 2.34 times higher than pure In 2 O 3 . In addition, 5 at% Al-doped In 2 O 3 gas sensor is also found to have lower detection limit and better selectivity to ethyl acetate. Hence, Al-doped In 2 O 3 material can be promising for sensing ethyl acetate gas with high performance. Also, the mechanism involved in improving sensing performance of Al-doped In 2 O 3 is discussed.