Photoreflectance of InxGa1-xAs/GaAs strained-layer superlattices

Photoreflectance of InGaAs/GaAs strained-layer superlattices is reported and explained based on the discussion of the photomodulation mechanisms and the lineshapes in the superlattice case. It is found that photoreflectance of a superlattice has a mixing lineshape of both first and third derivatives, and the mixing depends strongly on the coupling between the quantised states in adjacent potential wells.