Bias-tuned double-drift impatt diodes for wide-bandwidth operation

Double-drift IMPATT diodes with asymmetrical p- and n-type doping concentrations have exhibited output power levels of 3 mW to greater than 100 mW when bias tuned over a 20 GHz bandwidth in a Q band (40–60 GHz) reduced waveguide circuit. Similar output powers were also measured for the same asymmetrical diodes at V band (50–75 GHz) with tunable bandwidths of approximately 18 GHz.