Numerical analysis of power absorption and gas pressure dependence of microwave plasma using a tractable plasma description

Using a tractable plasma description, we have studied steady state of microwave plasmas under various operating conditions. Simplicity of the model allows us to carry out calculations with wide range of input parameters under realistic configurations. Model device used in the present simulation is based on the actual reactor for chemical vapor deposition of diamond. It is confirmed that, in spite of the model simplicity, the adopted model can, at least qualitatively, prescribe dependences of electron number density and power density on input microwave power and feed gas pressure. Linear dependence of the growth rate on the gas pressure, which is similar to numerically predicted dependence of the power density, is confirmed experimentally.