Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs

Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a 16.6 dB associated gain has been measured directly for an 8-finger 90nm node MOSFET (LG = 65nm). A self-consistent DC, ft and NFmin device model was developed, which allows prediction of the down-scaling trend of RF MOSFETs into deep nm scale.