Electron trapping in buried oxides formed by oxygen implantation

Previous work has demonstrated how the capacitance/voltage characteristics of the SOI (silicon-on-insulator) structure can be used to interpret the effect of Fowler-Nordheim stressing of the buried oxide. The authors extend the previous work by reporting the effects of avalanche injection of electrons into the buried oxide. As the average electric fields in the oxide are low during avalanche injection (typically >