MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As

Abstract : This work presents the investigation of Metalorganic Vapor Phase Epitaxy (MOVPE) growth of silicon delta-doped Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (Al(x)Ga(1-x)As) epilayers and different methods used for their characterization. The influence of growth temperature, SiH(4) flow rate and Al(x)Ga(1-x)As composition on delta-doping characteristics is discussed. Properties of the Silicon (Si) delta-doped structures were examined using capacitance-voltage (C-V) measurements, photoreflectance spectroscopy, micro-photoluminescence, micro-Raman spectroscopy, and photocurrent spectroscopy. (5 figures, 9 refs.)