Homogeneity of InGaAs/InP nanostructures

Atomic-force microscopy is applied to wet-chemically etched cleaved facets of InGaAs/InP nanoheterostructures. This technique allows the precise determination of process parameters relevant to advanced quantum devices realized by metal-organic vapor-phase epitaxy (MOVPE). We present data on thickness homogeneity and growth rates. We give evidence for the high quality of InGaAs/InP nanostructures grown by MOVPE.