Method for forming the nitride semiconductor light emitting device

A method for forming a nitride semiconductor light emitting device is provided to decompose Mg and H from each other within a p type nitride semiconductor layer at low thermal processing temperature by using a hydrogen absorption property of a Pd element. An n type nitride semiconductor layer(120), an active layer(130), a p type nitride layer(140) are sequentially formed on a substrate(110). A Pd/Zn alloy layer(200) is formed on the residual region except for a p type electrode region of the p type nitride semiconductor layer. A thermal process for the p type nitride semiconductor layer including the Pd/Zn alloy layer is performed. The Pd/Zn alloy layer is removed from the p type nitride semiconductor layer. An upper surface of the n type nitride semiconductor layer is partially exposed by mesa-etching partially the p type nitride semiconductor layer, the active layer, and the n type nitride semiconductor layer. An n type electrode is formed on the exposed part of the n type nitride semiconductor layer. A p type electrode is formed on the p type electrode region except for the Pd/Zn alloy layer.