Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m
2003
We present optical characterstics of InAsN/GaAs QD samples that contain a small amount of nitrogen inside InAs QD and emit a narrow photoluminescence (PL) signal at 1.3 /spl mu/m . The small addition of nitrogen into an InAs layer lowers the energy gap and at the same time decreases the lattice constant.
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