On-Wafer Microstrip Meander-Line Slow-Wave Structure at Ka-Band

A novel configuration for a Ka-band V-shaped microstrip meander-line slow-wave structure (SWS) is reported. The SWS is designed to work at a voltage less than 4 kV and provide a wide bandwidth. Coplanar waveguide (CPW) input–output feed lines and a shielding structure are incorporated to enable fast on-wafer cold test measurements on a CPW probe station without requiring dicing or a metal enclosure. Simulated dispersion characteristics and coupling impedance for the optimized design are presented. The simulated S 11 of the entire structure is better than −15 dB over 25–36 GHz. The proposed configuration is fabricated using $4^{\prime \prime }$ Si wafers and standard microfabrication processes. The measured S 11 of the entire structure is better than −10 dB over 20–40 GHz. The observed high insertion loss has been explained in detail, and alternative approaches that can reduce the loss have been proposed. The PIC simulation results show that for a 3.6-kV, 50-mA sheet beam, the output power can potentially reach 14.5 W at 34 GHz with a gain of 21.6 dB. A 3-dB bandwidth of about 25% centered at 32 GHz is also indicated.