Effect of crystal symmetry, strain and spin-orbit coupling on electronic and optical properties of III-nitrides

1998 
Electronic structures and optical gains of III-nitrides are theoretically investigated from the point of view of crystal symmetry, strain and spin orbit coupling. Lower crystal symmetry and stronger spin-orbit coupling would be preferable for lower threshold lasing. In case of bulk, the wurtzite is superior. The quantum well and the biaxial strain lead to symmetry lowering only in the zincblende. However, the threshold carrier density is still lower in the wurtzite. We propose that the gain characteristics would be further improved if it were possible to introduce anisotropic strain into the wurtzite (00 01) plane or such alloys as GaN P and GaNAs in the active layer.
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