Epitaxial growth of (011) Al on (100) Si by vapor deposition

The morphology, orientation relationship and interface structure of Al vapor deposited on (100) Si single‐crystal substrates were investigated by x‐ray diffraction and transmission electron microscopy. It was shown that vapor growth at room‐temperature results in a random (111) texture whereas growth at 280 °C leads to films with high‐quality (011) epitaxy and a high degree of grain boundary faceting. Due to alignment of close‐packed directions in the plane of the interface there are two orientation variants with a morphology characterized by an oriented 90° 〈011〉 mazed bicrystal structure.