Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments
2019
In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.
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