Investigation of EL2 defects in active layers of quantum dot semiconductor lasers

GAMESS computer program and nonempirical SCF MO LCAO calculations within the framework of the cluster approach have been used for modeling the electronic and structure properties of the EL2 defects in InGaAs quantum dot active layers of semiconductor lasers. Parameters of the arsenic-antisite defect centers for the In 0 . 4 Ga 0 . 6 As compounds have been calculated. It has been found that the arsenic-antisite defect center can exist in two forms, namely, a stable form demonstrating donor properties and a metastable form demonstrating both donor and acceptor properties. The results obtained can be applied to the analysis of the defect formation processes in the quantum dot laser diode active layers fabricated on the basis of indium-gallium arsenide.