Metal–insulator transition and spin degree of freedom in Silicon 2D electron systems

Abstract Magnetotransport in 2DESs formed in Si-MOSFETs and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9 T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.