The performance study of oxide by-passed(OB) lateral double diffused MOSFET

An SOI LDMOS device structure with Oxide By-passed(OB) was investigated and its breakdown mechanism and characteristic of structure was analyzed. Its performance was verified by 3D numerical simulation with SILVACO TCAD software. The simulated results show that the electrical field element of the device is modulated by the concept of similar Superjunction(SJ) structure. Compared with the SJ LDMOS device, OB LDMOS obtains the same breakdown voltage, simultaneously the specific on-resistance of the OB LDMOS reduces from 3.81mΩ·cm 2 to 1.96mΩ·cm 2 , except for achieving comparable performance and overcoming the high aspect ratio of fabrication structure and the difficulty of accurate concentration match of SJ LDMOS.