InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors

Traveling-wave electroabsorption modulators for operation at 1.55 /spl mu/m have been designed and fabricated. Devices of different lengths were characterized. Modulators with integrated termination resistors showed wide modulation bandwidths and excellent bandwidth-length products. A bandwidth of 43 GHz was measured for a 450-/spl mu/m-long device, which corresponds to a 19.3-GHz/spl middot/mm bandwidth length product. For a device length of 250 /spl mu/m, a bandwidth of 67 GHz is extrapolated from measurements up to 45 GHz.