A Low Temperature Poly-Si TFT with a SMC Poly-Si Crystallized at 420 °C

Amorphous silicon (a-Si) was crystallized by silicide mediated crystallization (SMC) using a very thin metal layer on a-Si. Such structure can be crystallized by annealing for 30 min at 420 °C in the presence of an electric field of 100 V/cm. The poly-Si TFT was fabricated using a triple layers of SMC poly-Si, silicon-nitride (SiNx), and a-Si:H. The TFT exhibited a field effect mobility of 24 cm2/Vs and a threshold voltage of 1V, and an on/off current ratio of ∼105. The SMC poly-Si TFT is very suitable for the production of large-area, high quality liquid crystal displays.