Grain and stoichiometry engineering for ultra-sensitive perovskite X-ray detectors

High sensitivity and low detection limit are key figures-of-merit for high-energy radiation detectors. Previously, it was found that hot pressing is an effective method to fabricate large, thick compact wafers for highly sensitive X-ray detectors. Herein, we further studied the formation mechanism of a compact wafer and the impacts of crystal size and stoichiometry of the perovskite wafer on the X-ray detection performance, which has rarely been investigated. It has been found that both heat and pressure are necessary for the formation of a compact wafer and the stoichiometry should be well controlled during the heat treatment. The impacts of temperature are two-fold: facilitating the growth of crystal grains and softening the grains. Pressure will induce the softened grains to form a compact wafer. The crystal grain size will be enlarged with the increase of temperature; however, as the temperature exceeds 150 °C, the atomic ratio of I to Pb will decrease with temperature, which will weaken the X-ray response of the wafer. Further, by adjusting the I to Pb ratio by adding more CH3NH3I (MAI), the X-ray response will be improved, achieving a high sensitivity of 4.2×105 μC Gyair-1 cm-2 at a field of 6.58 V mm-1. These findings provide insights for the use of grain engineering and composition engineering to design effective materials for high-performance X-ray detection.