Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding

We used Ag films to study atomic diffusion bonding (ADB) of wafers in vacuum. Results showed remarkable crystal lattice rearrangement at room temperature over depth of 50 nm from the connected Ag/Ag film interface, implying high bonding potential using Ag film in ADB.