An AlGaAs/GaAs heterostructure-emitter bipolar transistor

An AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BV/sub CEO/=15 V was obtained at a base doping level of 1*10/sup 19//cm/sup 3/. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate. >