Photoluminescence of Hexagonal Boron Nitride (h-BN) Film

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed H3BO4-BCl3-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at 1070 °C in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombina- tions.