The Poole-Frenkel effect in 6H-SiC diode characteristics

The large bandgap of SiC makes the recombination mechanism the main process in determining the forward current in a large range of temperature. We have added the Poole-Frenkel effect to the conventional Shockley-Read-Hall (SRH) term of the numerical device simulator MEDICI. This paper shows the influence of this effect on SiC. >