Effects of heat treatment on the chemical states of O1s and Sn3d at the surface of SnOx:F films by APCVD

Abstract X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical states of O1 s and Sn3 d at the surface of SnO x :F films as-deposited and post-heated at 700 °C for 202 s and 262 s. The effects of heat treatment on the surface chemistry of SnO x :F films were discussed for the analysis of conductivity. The results show that there are three kinds of components of O1 s and Sn3 d at the surface and the binding energy of all components moves to higher values after post-heating. The ratio [O I ]/[O II ] at the surface decreases from 1.80 for the as-deposited film to 0.74 for the film heated for 262 s. The as-deposited films exhibit evident non-stoichiometry with relative concentration [O]/[Sn] equal to 1.46. After heat treatment, the relative concentration is higher than the stoichiometry value of 2.