Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits

The AC random telegraph noise (AC RTN) in scaled multi-gate FETs (MuGFETs) is experimentally studied for the first time, which is found to have enhanced AC noise activity than planar FETs. A new AC RTN characterization method is proposed, which can simply catch the missing RTN statistics beyond the narrow “detectable window” of V G in conventional DC RTN method, thus is powerful for studying RTN under practical full-swing AC bias. A physical model is developed to explain the AC RTN statistics. Based on the new observations of AC RTN in MuGFETs, its impact on typical logic circuits is studied in terms of jitter analysis, with an improved simulation method. The results provide deep understanding of AC RTN, which is critical for the correct prediction and robust circuit design against RTN for future MuGFET technology.