An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes.

2016 
High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    54
    References
    61
    Citations
    NaN
    KQI
    []