Electrophysical properties of gallium nitride in the model of a nonhomogeneous semiconductor

Investigations of optical and photoelectrical properties on GaN are reported. It is stated that already in undoped GaN a sufficiently high defect concentration of donor and acceptor types exists in the crystalline lattice. In this case fundamental absorption edge as well as GaN photoconductivity are well characterized by a heavily doped compensated semiconductor model. GaN:Zn luminescent and electrical properties are consistently analysed by using the same approach as for the description of GaN properties in the framework of a non-homogeneous semiconductor model. [Russian Text Ignored.]