Near infrared detector based on resonance tunneling effect

The invention provides a near infrared detector based on a resonance tunneling effect. The major structure of the near infrared detector is a resonance tunneling diode, yet a double-barrier structure frequently used by the resonance tunneling diode is changed to a three-barrier structure, so that shot noise of the detector is inhibited, and an absorption layer is grown in an epitaxial mode between the three-barrier structure and a collector electrode. According to the invention, positive bias is applied when the detector works, near infrared light is incident from the collector electrode, a photoproduction electron-hole pair is generated at the absorption layer, and a photoproduction hole drifts towards the direction of the three-barrier structure under the effect of an electric field and is accumulated at the interface between the double-barrier structure and the absorption layer, such that electric potential at the two sides of the three-barrier structure is changed. The detector provided by the invention has quite high responsibility at a room temperature.