Triple‐crystal diffraction studies on ion‐implanted and other silicon crystals using a synchrotron source

Triple-crystal diffraction studies are capable of cleanly separating the various experimental components of the scattering in the vicinity of a Brags peak. The two-dimensional intensity distributions obtained in such an experiment consist of various components which extend in distinct directions in (Atos, A2Os) space, where Atos and A20s are the offset angles of the sample and analyzer/detector from the Bragg condition. One-dimensional 'slice' scans can be used in studying specific details, given a known disposition of the components, be they dynamical, kinematical or aspects of the instrumental arrangement. In this paper triple-crystal diffraction results obtained for given ion-implanted and other Si crystals using both a conventional X-ray tube and a synchrotron source are presented and compared.