Solid phase crystallization of thin films of Si prepared by plasma‐enhanced chemical vapor deposition

Solid phase crystallization of thin films of undoped amorphous Si prepared by plasma enhanced chemical vapor deposition has been studied by transmission electron microscopy (TEM). From the TEM images, the thermodynamic parameters for the amorphous and crystalline phases were extracted. These parameters were compared with those previously reported for evaporated, chemical vapor deposited, and self‐implanted amorphous Si. We conclude that the thermodynamic parameters are very similar for different amorphous Si films, although the initial structure of the films is comparatively different from one to another. To explain this, the existence of an intermediate amorphous state is assumed and discussed.