Deep, vertical etching of flame hydrolysis deposited hi-silica glass films for optoelectronic and bioelectronic applications

We report on the use of CHF3, C2F6, and SF6 as etch gases for deep reactive ion etch processing of germano-boro-silicate glass films prepared by flame hydrolysis deposition (FHD). The glass film under study had a composition of 83 wt % SiO2, 12 wt % GeO2, and 5 wt % B2O3. The scope of the study was to identify the benefits and drawbacks of each gas for fabrication of deep structures (>10 μm) and to develop an etch process in each gas system. The etch rate, etch profile, and surface roughness of the FHD glass films were investigated for each gas. Etch rates and surface roughness were measured using a surface profiler and etch profiles were assessed using a scanning electron microscope. It was found that SF6 had the highest FHD glass etch rate and nichrome mask selectivity (>100:1) however, it had the lowest photoresist mask selectivity ( 80:1) and photoresist (>10:1) and the etch profile was ...