The development of technology for growing InAs/GaSb superlattices by MOCVD

This study is dedicated to developing the technology for growing InAs/GaSb superlattices (SLs) by MOCVD. The structures were studied by transmission electron microscopy (TEM) and photoluminescence (PL) methods. We concluded that hetero-interface sharpness is not affected by the pause time between growth stages for separate layers or by switching the layer direction. A possible interpretation for the spectra of SLs was suggested.